GaN-on-Si Power Devices Market Insights: Industry Opportunities, Drivers, Outlook and Trends Research Report
Global Info Research announces the release of the report “Global GaN-on-Si Power Devices Market 2025 by Manufacturers, Regions, Type and Application, Forecast to 2031”. This report provides a detailed overview of the GaN-on-Si Power Devices market scenario, including a thorough analysis of the GaN-on-Si Power Devices market size, sales quantity, average price, revenue, gross margin and market share.The GaN-on-Si Power Devices report provides an in-depth analysis of the competitive landscape, manufacturer’s profiles, regional and national market dynamics, and the opportunities and challenge that the market may be exposed to in the near future. Global GaN-on-Si Power Devices market research report is a comprehensive analysis of the current market trends, future prospects, and other pivotal factors that drive the market.
According to our (Global Info Research) latest study, the global GaN-on-Si Power Devices market size was valued at US$ 307 million in 2024 and is forecast to a readjusted size of USD 1203 million by 2031 with a CAGR of 21.8% during review period.
Request PDF Sample Copy or Get this report @: https://www.globalinforesearch.com/reports/2584822/gan-on-si-power-devices
Market Segmentation
GaN-on-Si Power Devices market is split by Type and by Application. For the period 2020-2031, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value.
Market segment by Type: Low withstand Voltage, 200V to 600V、Medium withstand Voltage, 600V to 1000V、High withstand Voltage, 1000V or Higher
Market segment by Application: Consumer Electronics、Industrial、Telecom & Datacom、Automotive Electronics、Defense & Aerospace、Renewable & Energy Storage、Others
Major players covered: Innoscience、Navitas Semiconductor、Power Integrations, Inc.、Infineon (GaN Systems)、STMicroelectronics、Efficient Power Conversion Corporation (EPC)、Renesas Electronics (Transphorm)、Wolfspeed, Inc、onsemi、Microchip Technology、Rohm、NXP Semiconductors、Toshiba、Texas Instruments、Alpha and Omega Semiconductor Limited (AOS)、Nexperia、Epistar Corp.、Cambridge GaN Devices (CGD)、Wise Integration、Ampleon、GaNext、Chengdu DanXi Technology、Southchip Semiconductor Technology、Panasonic、Toyoda Gosei、China Resources Microelectronics Limited、CorEnergy、Dynax Semiconductor、Sanan Optoelectronics、Hangzhou Silan Microelectronics、Guangdong ZIENER Technology、CETC 13、CETC 55、Qingdao Cohenius Microelectronics、Nanjing Xinkansen Technology、GaNPower、CloudSemi
The content of the study subjects, includes a total of 15 chapters
Chapter 1, to describe GaN-on-Si Power Devices product scope, market overview, market estimation caveats and base year.
Chapter 2, to profile the top manufacturers of GaN-on-Si Power Devices, with price, sales, revenue and global market share of GaN-on-Si Power Devices from 2020 to 2025.
Chapter 3, the GaN-on-Si Power Devices competitive situation, sales quantity, revenue and global market share of top manufacturers are analyzed emphatically by landscape contrast.
Chapter 4, the GaN-on-Si Power Devices breakdown data are shown at the regional level, to show the sales quantity, consumption value and growth by regions, from 2020 to 2031.
Chapter 5 and 6, to segment the sales by Type and application, with sales market share and growth rate by type, application, from 2020 to 2031.
Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value and market share for key countries in the world, from 2020 to 2025.and GaN-on-Si Power Devices market forecast, by regions, type and application, with sales and revenue, from 2025 to 2031.
Chapter 12, market dynamics, drivers, restraints, trends and Porters Five Forces analysis.
Chapter 13, the key raw materials and key suppliers, and industry chain of GaN-on-Si Power Devices.
Chapter 14 and 15, to describe GaN-on-Si Power Devices sales channel, distributors, customers, research findings and conclusion.
Our Market Research Advantages
Global Perspective: Our research team has a strong understanding of the company in the global GaN-on-Si Power Devices market. and offers pragmatic data to the company.
Aim And Strategy: Accelerate your business integration, provide professional market strategic plans, and promote the rapid development of enterprises.
Innovative Analytics: We have the most comprehensive database of resources, provide the largest market segments and business information.
About Us
Global Info Research is a company that digs deep into global industry information to support enterprises with market strategies and in-depth market development analysis reports. We provide market information consulting services in the global region to support enterprise strategic planning and official information reporting, and focuses on customized research, management consulting, IPO consulting, industry chain research, database and top industry services. At the same time, Global Info Research is also a report publisher, a customer and an interest-based suppliers, and is trusted by more than 30,000 companies around the world. We will always carry out all aspects of our business with excellent expertise and experience.
Contact Us
Global Info Research
Web: https://www.globalinforesearch.com
Email: report@globalinforesearch.com
CN: 0086-176 6505 2062
HK: 00852-5803 0175
US: 001-347 966 1888
According to our (Global Info Research) latest study, the global GaN-on-Si Power Devices market size was valued at US$ 307 million in 2024 and is forecast to a readjusted size of USD 1203 million by 2031 with a CAGR of 21.8% during review period.
Request PDF Sample Copy or Get this report @: https://www.globalinforesearch.com/reports/2584822/gan-on-si-power-devices
Market Segmentation
GaN-on-Si Power Devices market is split by Type and by Application. For the period 2020-2031, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value.
Market segment by Type: Low withstand Voltage, 200V to 600V、Medium withstand Voltage, 600V to 1000V、High withstand Voltage, 1000V or Higher
Market segment by Application: Consumer Electronics、Industrial、Telecom & Datacom、Automotive Electronics、Defense & Aerospace、Renewable & Energy Storage、Others
Major players covered: Innoscience、Navitas Semiconductor、Power Integrations, Inc.、Infineon (GaN Systems)、STMicroelectronics、Efficient Power Conversion Corporation (EPC)、Renesas Electronics (Transphorm)、Wolfspeed, Inc、onsemi、Microchip Technology、Rohm、NXP Semiconductors、Toshiba、Texas Instruments、Alpha and Omega Semiconductor Limited (AOS)、Nexperia、Epistar Corp.、Cambridge GaN Devices (CGD)、Wise Integration、Ampleon、GaNext、Chengdu DanXi Technology、Southchip Semiconductor Technology、Panasonic、Toyoda Gosei、China Resources Microelectronics Limited、CorEnergy、Dynax Semiconductor、Sanan Optoelectronics、Hangzhou Silan Microelectronics、Guangdong ZIENER Technology、CETC 13、CETC 55、Qingdao Cohenius Microelectronics、Nanjing Xinkansen Technology、GaNPower、CloudSemi
The content of the study subjects, includes a total of 15 chapters
Chapter 1, to describe GaN-on-Si Power Devices product scope, market overview, market estimation caveats and base year.
Chapter 2, to profile the top manufacturers of GaN-on-Si Power Devices, with price, sales, revenue and global market share of GaN-on-Si Power Devices from 2020 to 2025.
Chapter 3, the GaN-on-Si Power Devices competitive situation, sales quantity, revenue and global market share of top manufacturers are analyzed emphatically by landscape contrast.
Chapter 4, the GaN-on-Si Power Devices breakdown data are shown at the regional level, to show the sales quantity, consumption value and growth by regions, from 2020 to 2031.
Chapter 5 and 6, to segment the sales by Type and application, with sales market share and growth rate by type, application, from 2020 to 2031.
Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value and market share for key countries in the world, from 2020 to 2025.and GaN-on-Si Power Devices market forecast, by regions, type and application, with sales and revenue, from 2025 to 2031.
Chapter 12, market dynamics, drivers, restraints, trends and Porters Five Forces analysis.
Chapter 13, the key raw materials and key suppliers, and industry chain of GaN-on-Si Power Devices.
Chapter 14 and 15, to describe GaN-on-Si Power Devices sales channel, distributors, customers, research findings and conclusion.
Our Market Research Advantages
Global Perspective: Our research team has a strong understanding of the company in the global GaN-on-Si Power Devices market. and offers pragmatic data to the company.
Aim And Strategy: Accelerate your business integration, provide professional market strategic plans, and promote the rapid development of enterprises.
Innovative Analytics: We have the most comprehensive database of resources, provide the largest market segments and business information.
About Us
Global Info Research is a company that digs deep into global industry information to support enterprises with market strategies and in-depth market development analysis reports. We provide market information consulting services in the global region to support enterprise strategic planning and official information reporting, and focuses on customized research, management consulting, IPO consulting, industry chain research, database and top industry services. At the same time, Global Info Research is also a report publisher, a customer and an interest-based suppliers, and is trusted by more than 30,000 companies around the world. We will always carry out all aspects of our business with excellent expertise and experience.
Contact Us
Global Info Research
Web: https://www.globalinforesearch.com
Email: report@globalinforesearch.com
CN: 0086-176 6505 2062
HK: 00852-5803 0175
US: 001-347 966 1888
